He-Ion Microscope
Critical Dimension Measurement Applications
As devices continue to shrink, measurement techniques must continue to evolve to keep pace. Optical CD measurement tools have given way in most cases to Scanning Electron Microscopes.

Scanning Electron Microscopes typically have excellent resolution, but not particularly good material contrast. Without good material contrast, it can be difficult to determine where the edge of a critical feature is. The ORION™ helium ion microscope offers a significant advantage over traditional SEM technology. SEM's typically produce approximately one secondary electron for each incoming electron. The helium ion beam, by contrast, produces from 3-9 secondary electrons, depending on the substrate material, for each incoming helium ion. This creates a better signal with higher contrast between different materials.
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Semiconductor Applications

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