Phoenix, Arizona, USA | Booth #500

Phoenix Convention Center - Phoenix, AZ, USA
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Improve Your FA for Power Semiconductor and Advanced Devices

New materials and semiconductor technologies are advancing the performance of next-generation electronics. Fast and accurate failure analysis becomes more important than ever for all stages of the product life cycle – from R&D to yield improvement to field returns. ZEISS offers advanced 2D and 3D imaging solutions for both front-end and back-end processes. Please visit our booth #500 at ISTFA to speak with our team about our unique X-ray, FE-SEM and FIB-SEM microscopy solutions for failure analysis and process development.

Discover how GeminiSEM FE-SEM enables ultra-low voltage surface imaging and large field of view nanoprobing for your most demanding imaging and analytical tasks. See how Xradia 3D X-ray microscopes powered by artificial intelligence deliver faster scan times with images that look better than ever. Explore how Crossbeam FIB-SEM achieves single-digit-nm 3D resolution for failure analysis, constructional analysis, or metrology of the smallest logic and memory structures. Learn about our breakthrough Crossbeam laser FIB-SEM for rapid nanoscale imaging of deeply buried features in stacked die and packages and high-resolution real-time SEM control for lamella preparation.

Tools of the Trade Tour – Monday, November 13

ZEISS is participating in the Tools of the Trade Tour on Monday night. Secure one of the limited slots in the Tour to discover the future of semiconductor analysis with our FIB-SEM tools. Dive deep into breakthroughs and innovations that will redefine your imaging and analysis experience!


ZEISS in the Technical Program

Sunday, November 12
Tutorial – Non-destructive Defect Localization by Scanning Acoustic Microscopy and X-ray Imaging

Session: Package and Physical Analysis Challenges Tutorial I – 8:00 am MST
Sebastian Brand, Fraunhofer IMWS; Cheryl Hartfield, Carl Zeiss Microscopy; Thomas Moore, Waviks, Inc.

Tutorial – Power Electronics Failure Analysis
Session: Technology Specific and Featured Tutorial I – 1:30 pm MST
Greg Johnson, Heiko Stegmann, Carl Zeiss Microscopy; Domenico Mello, STMicroelectronics; Andreas Rummel, Kleindiek Nanotechnik; John Byrnes, Semilab; Shubhodeep Goswami, GE Global Research; Hirotoshi Terada, Hamamatsu Photonics KK

Monday, November 13
Combining Three-dimensional FIB-SEM Imaging and EBIC to Characterize Power Semiconductor Junctions

Session: Power Devices (Si, SiC, GaN) II Session – 1:20 pm PST
Heiko Stegmann, Greg Johnson, Carl Zeiss Microscopy; Andreas Rummel, Kleindiek Nanotechnik

In-situ Junction Analysis in SiC (and GaN)
Session: Power Devices (Si, SiC, GaN) III Session – 3:00 pm PST
Greg Johnson, Heiko Stegmann, Thomas Rodgers, Carl Zeiss Microscopy; Andreas Rummel, Kleindiek Nanotechnik; Frank Hitzel, DoubleFox GmbH; Domenico Mello, STMicroelectronics; Martin Kuball, University of Bristol


Tuesday, November 14
A Multiscale and Multimodal Correlative Microscopy Workflow to Characterize a Copper Segregation Identified in Epitaxial Layer in Power MOSFETs
Session: Case Studies: FA Process and Workflows I – 1:50 pm MST
Flavio Cognigni, Marco Rossi, Sapienza University of Rome; Heiko Stegmann, Carl Zeiss Microscopy; Giuseppe Sciuto, Giuseppe Anastasi, Massimiliano Astuto, Marco Bonadonna, Domenico Mello, STMicroelectronics


Wednesday, November 15
Tomography of Electrical Data in Advanced-node SRAMs
Session: Scanning Probe Analysis – 9:40 am MST
Greg Johnson, Carl Zeiss Microscopy; Frank Hitzel, DoubleFox GmbH

Tutorial - Basics and Current Aspects of Scanning Electron Microscopy
Session: Microscopy Tutorial VII – 4:00 pm MST
Heiko Stegmann, Carl Zeiss Microscopy


Thursday, November 16
Detecting Wafer Level Cu Pillar Defects Using Advanced 3D X-ray Microscopy (XRM) with Submicron Resolution
Package Level Fault Isolation Session – 8:00 am MST
Susan Li, John Frame, Edita Madriaga-Berry, Jose Hulog, Ming Zhang, Infineon Technologies; Allen Gu, Allen Gu, David Taraci, Carl Zeiss Microscopy

An Artificial Intelligence Powered Resolution Recovery Technique and Workflow to Accelerate Package Level Failure Analysis with 3D X-ray Microscopy
Package Level Fault Isolation Session – 8:40 am MST
Syahirah Mohammad Zulkifli, Bernice Zee, Qui Wen, Maverique Ong, Advanced Microscopy (AMD); Allen Gu, Andriy Andreyev, Masako Terada, Yanjing Yang, Carl Zeiss Microscopy

FIB-SEM Tomography Acquisition and Data Processing Optimization for Logic and Memory Structures
Microscopy Analysis and Materials Characterization Session – 8:40 am MST
Heiko Stegmann, Carl Zeiss Microscopy; Alexandre Laquerre, Fibics Inc.


ZEISS Microscopy Solutions for Failure Analysis

ZEISS Xradia Versa X-ray Microscope

Image buried defects and package structures non-destructively

ZEISS Crossbeam laser FIB-SEM

Rapidly access site-specific features buried deeply within IC packages


Achieve versatile, efficient imaging and processing for high-resolution 2D and 3D insights


Perform versatile, high-resolution imaging and characterization

Connect to Learn More about Solutions for Failure Analysis

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