Tuesday, August 3 | 2:00 pm EDT

The Impact of Advanced SEM on Materials Characterization


Dr. Sato Kaoru

Fellow at JFE Techno-Research Corporation


SEM today has excellent performances at low voltages and implementation of multiple imaging detectors is enabling efficient acquisition of high quality SE and BSE images. Unlike TEM/STEM, the finest probe condition that is normally achieved at the highest accelerating voltage does not always give the best resolution in the SEM where bulk specimens are normally used. By optimizing the acceptance of signal electrons, material and topographic contrast can be obtained separately with different SE detectors. Optimization of collection angle will allow preferential extraction of either atomic number or channeling contrast in the BSE imaging. Furthermore, a windowless SDD, whose WD is optimized to that for the imaging sweet spot, enables EDX analyses below 10 nm for a bulk specimen. 
Join us to see:
  • Practical examples of low kV imaging for topographic and materials contrast
  • How one must adjust working distance and voltage depending on the material
  • Several examples of the information one can obtain from the “sweet spot” of working distance and voltage
  • Realization of X-ray analysis at the imaging “sweet spot”
  • Preferential extraction of either atomic number contrast or channeling contrast with backscattered electron imaging
  • Electron channeling contrast imaging of strain and dislocations