ZEISS Process Control
innovationMADE BY ZEISS
Accelerating new processes for next-generation devices. ZEISS Process Control Solutions
innovationMADE BY ZEISS

Process Control Solutions

As the complexity and variety of semiconductor technologies continues to increase so do the challenges for process control technologies. Modern manufacturing techniques are increasingly incorporating novel materials and more complex 3D structures to meet rapidly evolving market demands. Resulting new processes are driving the need for new failure analysis and process control methods.

Based on a broad technology portfolio, ZEISS offers innovative process control solutions that deliver actionable information for front-end of line (FEOL), back-end of line (BEOL), packaging and assembly. ZEISS’s ongoing development of these technologies is key to meeting the semiconductor industry’s challenges for next-generation devices.

 

MultiSEM

Unleash acquisition speed of up to 91 parallel electron beams. Image sample areas up to 1 cm2 at nanometer resolution in <3 hours. This multi-beam scanning electron microscope is designed for continuous, reliable operation. 
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ORION NanoFab

Seamlessly switch between gallium, neon and helium ion beams in a single tool for combined highest precision and speed. This unique multi-ion beam platform enables next generation technology developments with 3D analysis, rapid device/circuit prototyping and sub-10 nm node characterization capabilities.  
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Crossbeam

Combine the imaging, milling and analytical performance of this next-generation FIB-SEM for nanoscale tomography and sample preparation. The modular platform concept and the open, easily extendable software architecture of this 3D nano-workstation enables high-throughput process control, structural inspection and failure analysis.
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Xradia Versa

Extend the boundaries of non-destructive physical failure analysis (PFA) and production quality control (QC) for semiconductor packages with your ZEISS X-ray microscope. Acquire high-resolution 3D images and tomography of fault locations within fully intact packages, and view virtual cross-sections in any orientation with <700 nm resolution.
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