ORION NanoFab

Multi-Ion FIB Tool - Accelerate next- generation device development

ORION NanoFab Overview

This unique multi-ion beam platform enables next-generation technology development with 3D analysis, rapid device/circuit prototyping and sub-10 nm node characterization capabilities. Seamlessly switch between gallium, neon and helium ion beams in a single tool for combined highest precision and speed. 

Highlights

Sub-nm resolution and voltage contrast imaging

ORION NanoFab generates high resolution (0.5 nm) and passive voltage contrast images of your sample in the same instrument used for fabrication. Perform defect localization and FIB registration for subsequent characterization and analysis.

Rapid device/circuit prototyping

Use maskless nano-fabrication to implement circuit design changes and validate prototypes without going through a mask change. Directly mill and pattern with ion beam induced deposition/etching. With high precision and superior endpointing, the neon beam extends FIB utility in editing advanced node technologies.

Achieve high throughput and precision in a single platform

Use gallium FIB to remove bulk material. Take advantage of the neon beam for precision nanomachining with speed or use the helium beam to fabricate sub-10 nm structures. Avoid gallium beam-induced electrical device shifts with the neon and helium ion beams.

Key Applications

Circuit edit of advanced node technologies beyond Ga FIB capabilities

  • Perform sub-50 nm IC modifications without incurring costs of a new mask set
  • Enable access to buried structures for probing with high aspect ratio via milling

Front-end of line (FEOL) defect localization

  • Identify fault location with ion beam induced passive voltage contrast
  • Investigate buried defects in 3D easily with simultaneous neon FIB milling and imaging

Emerging device process optimization 

  • Inspect quality of thin films and 2D semiconductors with high surface sensitivity
  • Track critical dimensions through the length of high aspect ratio structures
  • Facilitate lithography/etch process characterization with superior depth of focus and edge contrast

Images & Videos

IC Design and Analysis

Backside access to device structures for circuit edit and electrical characterization

Helium ion beam induced deposition of 10 nm wide metal lines

Ultra-high resolution cross section imaging of flash memory cell

Buried copper lines exposed with Neon ion beam

12 nm lines etched in TaN absorber layer

High precision helium ion beam induced etching with XeF2

Block co-polymer thin film

High resolution imaging of non-coated polymers

Courtesy of: Eric Flaim, University of Alberta, Edmonton, Alberta, Canada T6G 2V4

Via chain failure localization and root cause investigation

Failure localization with passive voltage contrast

Via Change Failure Localization and Root Cause Investigation

Failure root cause investigation with 3D imaging

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Defect Review of DRAM Tungsten Plugs

Milling and imaging with neon focused ion beam

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3D structural analysis of FINs

Nanotomography with Ga and He focused ion beams

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Downloads

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