ORION NanoFab Overview
This unique multi-ion beam platform enables next-generation technology development with 3D analysis, rapid device/circuit prototyping and sub-10 nm node characterization capabilities. Seamlessly switch between gallium, neon and helium ion beams in a single tool for combined highest precision and speed.
Highlights
Sub-nm resolution and voltage contrast imaging
ORION NanoFab generates high resolution (0.5 nm) and passive voltage contrast images of your sample in the same instrument used for fabrication. Perform defect localization and FIB registration for subsequent characterization and analysis.
Rapid device/circuit prototyping
Use maskless nano-fabrication to implement circuit design changes and validate prototypes without going through a mask change. Directly mill and pattern with ion beam induced deposition/etching. With high precision and superior endpointing, the neon beam extends FIB utility in editing advanced node technologies.
Achieve high throughput and precision in a single platform
Use gallium FIB to remove bulk material. Take advantage of the neon beam for precision nanomachining with speed or use the helium beam to fabricate sub-10 nm structures. Avoid gallium beam-induced electrical device shifts with the neon and helium ion beams.
Key Applications
Circuit edit of advanced node technologies beyond Ga FIB capabilities
- Perform sub-50 nm IC modifications without incurring costs of a new mask set
- Enable access to buried structures for probing with high aspect ratio via milling
Front-end of line (FEOL) defect localization
- Identify fault location with ion beam induced passive voltage contrast
- Investigate buried defects in 3D easily with simultaneous neon FIB milling and imaging
Emerging device process optimization
- Inspect quality of thin films and 2D semiconductors with high surface sensitivity
- Track critical dimensions through the length of high aspect ratio structures
- Facilitate lithography/etch process characterization with superior depth of focus and edge contrast
Images & Videos
IC Design and Analysis
Backside access to device structures for circuit edit and electrical characterization
Helium ion beam induced deposition of 10 nm wide metal lines
Ultra-high resolution cross section imaging of flash memory cell
Buried copper lines exposed with Neon ion beam
12 nm lines etched in TaN absorber layer
High precision helium ion beam induced etching with XeF2
Block co-polymer thin film
High resolution imaging of non-coated polymers
Courtesy of: Eric Flaim, University of Alberta, Edmonton, Alberta, Canada T6G 2V4
Via chain failure localization and root cause investigation
Failure localization with passive voltage contrast
Via Change Failure Localization and Root Cause Investigation
Failure root cause investigation with 3D imaging
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Defect Review of DRAM Tungsten Plugs
Milling and imaging with neon focused ion beam
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3D structural analysis of FINs
Nanotomography with Ga and He focused ion beams
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Downloads
- ORION Nanofab brochure
- White Paper "ORION Nanofab: An Overview of Applications"