This unique multi-ion beam platform enables next-generation technology development with 3D analysis, rapid device/circuit prototyping and sub-10 nm node characterization capabilities. Seamlessly switch between gallium, neon and helium ion beams in a single tool for combined highest precision and speed.
Sub-nm resolution and voltage contrast imaging
ORION NanoFab generates high resolution (0.5 nm) and passive voltage contrast images of your sample in the same instrument used for fabrication. Perform defect localization and FIB registration for subsequent characterization and analysis.
Rapid device/circuit prototyping
Use maskless nano-fabrication to implement circuit design changes and validate prototypes without going through a mask change. Directly mill and pattern with ion beam induced deposition/etching. With high precision and superior endpointing, the neon beam extends FIB utility in editing advanced node technologies.
Achieve high throughput and precision in a single platform
Use gallium FIB to remove bulk material. Take advantage of the neon beam for precision nanomachining with speed or use the helium beam to fabricate sub-10 nm structures. Avoid gallium beam-induced electrical device shifts with the neon and helium ion beams.
Circuit edit of advanced node technologies beyond Ga FIB capabilities
Front-end of line (FEOL) defect localization
Emerging device process optimization
Failure root cause investigation with 3D imaging
Milling and imaging with neon focused ion beam
Nanotomography with Ga and He focused ion beams