Xradia 800 Ultra

Nanoscale 3D X-ray Microscope for Leading-edge Packages and BEOL

Overview

ZEISS Xradia 800 Ultra 3D X-ray microscopes (XRM) achieve nanoscale resolution with unparalleled performance for 3D imaging of advanced packaging structures and defects, aiding package development and failure analysis.

The industry’s only 3D X-ray microscope designed with unique X-ray optics adapted from synchrotron technology, ZEISS Xradia 800 Ultra produces images of buried features with resolution down to 50 nm. Applications include process analysis, construction analysis and defect analysis of ultra-fine-pitch flip chip and wafer-level interconnects, including redistribution layers, die-level back-end-of-line (BEOL) interconnects, direct hybrid bonds, and ultra-fine-pitch Cu-pillar microbumps. 

Highlights of Xradia 800 Ultra

Non-invasive, Nanoscale-resolution 3D Imaging

  • Visualize buried features with nanoscale spatial resolution while maintaining the volume integrity of the region of interest
  • Preserve structures and defects for a wide array of analyses; (typically 100 μm diameter volume efficiently extracted in <1 hour)
  • View unlimited virtual cross sections from any angle with 150 nm and 50 nm spatial resolution

Improve Processes for Ultra-fine-pitch Package and BEOL Interconnects

  • Image and view the texture and volume of solder consumed by intermetallic compounds in fine-pitch copper-pillar microbumps
  • Identify defects in intact sample sites
  • Guide next steps of physical failure analysis and expand post-imaging analysis options with EDS, nanoprobing and SIMS, as well as FIB or TEM
  • Characterize construction quality of blind assemblies, such as wafer-to-wafer bonded interconnect and direct hybrid bonds

Xradia 800 Ultra Benefits

  • Unique X-ray optics, originally designed for synchrotron facilities, deliver the highest possible nanoscale resolution in a lab-based instrument for imaging ultra-fine-pitch interconnects and features
  • Two imaging modes provide non-destructive 3D imaging with spatial resolutions of 150 nm and 50 nm (sample prep required)
  • 100 μm diameter sample can be extracted in <1 hour using efficient ZEISS workflows that are non-invasive to the region of interest

Key Applications for Semiconductors

Back-end-of-line (BEOL) and microbump structural and defect analysis

  • Image fully intact packages at high resolution – locate and visualize submicron defects, non-destructive to the region of interest
  • View buried structures and defects at exact planes of interest – from any angle
  • Visualize defect orientation and use this information to guide PFA – reduce occurrences of “no visual defect”  found  
Stacked die interconnect analysis. Projection image of extracted volume (center); 3D image of 25 μm diameter Cu-pillar
microbump and virtual cross section (left); 3D image and virtual plan-view slice (right) of BEOL metal 6 interconnect
(28 nm Si node).

Stacked die interconnect analysis. Projection image of extracted volume (center); 3D image of 25 μm diameter Cu-pillar microbump and virtual cross section (left); 3D image and virtual plan-view slice (right) of BEOL metal 6 interconnect (28 nm Si node).

The Technology Behind Xradia Ultra

Xradia 800 Ultra uses X-ray technology originally designed for synchrotron facilities to deliver the highest possible nanoscale resolution in a lab-based instrument for imaging ultra-fine-pitch interconnects and features.

Xradia Ultra optics schematic

Xradia Ultra optics schematic

Downloads

  • Product Flyer - "ZEISS Xradia 800 Ultra - Nanoscale-resolution 3D X-ray microscope for advanced packaging development and failure analysis"