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Advanced Microscopy Solutions​

Accelerating Semiconductor Device Development and Failure Analysis​

By accurate microstructural imaging and fault isolation
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Microscopy Applications for Advanced Logic and Memory​ Analyzing logic and memory semiconductors is challenged by novel materials, complex geometries, and shrinking transistor sizes, requiring advanced electron microscopy and nanoprobing. Enhance your throughput and resolution for in-situ characterization and defect localization without sample damage, using magnetic field-free imaging and excellent beam stability.
  • 2D and 3D Imaging​

    Understand physical, chemical and electrical characteristics of complex semiconductor materials and microstructures​.

  • Accuracy and Repeatability​

    Automate microscopy workflows to improve reliability and efficiency of device development and failure analysis​.

  • Connected Data​

    Correlate multi-scale, multi-modal microstructural analyses with electron, X-ray and light microscopy using connected software​.

Semiconductor Logic and Memory Applications

Logic and memory devices are adopting novel materials and increasingly complex geometries. Our fault isolation and imaging solutions provide industry-leading performance and high productivity for beam sensitive materials and 3D devices, enabling fast root cause identification of failures and high throughput characterization.

3D NAND FIB-SEM Tomography
3D NAND FIB-SEM Tomography

Nanoscale Tomography of 3D NAND

It is important during process development and failure analysis of complex 3D NAND devices to characterize multiple cross-sectional planes and reconstruct the nanoscale 3D structures.​

FIB-SEM tomography of a 3D NAND sample acquired using ZEISS Crossbeam 550 and Atlas-3D. Sample was depackaged and mechanically polished down to the topmost word line. Shown is a virtual sub-volume of 2 x 1.5 x 0.7 µm3 size, extracted from the dataset at the transition region of upper to lower deck. Reconstructed voxel size 4 x 4 x 4 nm3.​

Explore ZEISS Crossbeam FIB-SEM

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3D Tomography of 7 nm SRAM

Accurate reconstruction of 3D nanostructure in advanced node SRAM devices are critical for finding defects and assessing process uniformity.​

3D FIB-SEM tomography dataset of a 7 nm SRAM, acquired in a ZEISS Crossbeam FIB-SEM. Volume size 2.34 x 1.18 x 2.35 µm3, voxel size (1.5 nm)3.​

Explore ZEISS Crossbeam FIB-SEM

FIB-SEM Cross Section of 7 nm SRAM
FIB-SEM Cross Section of 7 nm SRAM

Fast Cross-sectioning with Nanometer Precision

Fast cross-sectioning is a versatile tool to inspect nanostructures of recent technology nodes, which demands high resolution and precision.​

​SEM image of a corner FIB cut into a 7 nm SRAM. FIB milling and SEM imaging were done in a ZEISS Crossbeam FIB-SEM.​

Explore ZEISS Crossbeam FIB-SEM

FIB-SEM Lamella Prep in 7 nm SRAM
FIB-SEM Lamella Prep in 7 nm SRAM

Precise TEM Lamellae Preparation

Most failure analysis workflow for advanced semiconductor devices involves sample preparation for TEM. Ultra-thin lamellae preparation requires precise end-pointing, live imaging while milling and quality validation.​

​30 kV STEM bright field overview image of a plan view lamella of a 7 nm technology node processor at contact level. Lamella preparation and STEM imaging were done in a ZEISS Crossbeam FIB-SEM. Inset: A STEM bright field image at high magnification shows the FinFETs in detail and allows to assess process variations.​

Explore ZEISS Crossbeam FIB-SEM

Low-k Film Stack Imaging with SE2 Detector
Low-k Film Stack Passive Voltage Control with InLens Detector

Defect Localization

Simultaneous imaging of surface and sub-surface features are important to identify critical defects in the semiconductor nanostructures.​

Mechanical polished section of the same field of view in a 14 nm device imaged with a GeminiSEM FE-SEM. ​
Left:​
The SE2 image highlights topological features, showing exposed vias. ​
Right:​
The InLens image demonstrates the passive voltage contrast of areas which are connected to different depths of circuitry or connected to structures of different implant polarity. ​

Explore ZEISS GeminiSEM FE-SEM

80 eV Nanoprobing of 7 nm SRAM
80 eV Nanoprobing of 7 nm SRAM

22 nm SRAM

22 nm SRAM

Ultra Low-kV Imaging

Advanced node logic and memory device manufacturing includes beam-sensitive materials and structures. Magnetic field and distortion free imaging are key for sample navigation and probe landing in electrical nanoprobing.​

7 nm SRAM device imaged with a GeminiSEM FE-SEM at 80 eV. ​

Explore ZEISS GeminiSEM FE-SEM

EBAC Nanoprobing 14 nm Logic Device at 2 kV
EBAC Nanoprobing 14 nm Logic Device at 8 kV

Logic Tracing with EBAC

Exploring different depths in the sample to trace the full connective path requires seamless transition between different acceleration potentials. Nanoprobing based EBAC analysis address this critical failure analysis need.​

Net trace in a 14 nm SRAM imaged in a GeminiSEM FE-SEM with the Electron Beam Absorbed Current (EBAC) method. Images are an overlay of EBAC data (red) on top of the InLens image for the same field of view, at 2 kV (left) and 8 kV (right). ​

Explore ZEISS GeminiSEM FE-SEM

7 nm SRAM Nanoprobe Image InLens Detector
7 nm SRAM EBIC Nanoprobe

Electrical Fault Isolation with EBIC

During failure analysis, the use of EBIC can monitor p/n junction health and localize areas with electrically active defects.​

7 nm SRAM mechanically polished to contact level. The InLens (left) and Electron Beam Induced Current (EBIC) (right) images are compared for the same field of view, taken at 150 eV in a GeminiSEM FE-SEM.​

Explore ZEISS GeminiSEM FE-SEM

EBIRCH Localization on 22 nm SRAM
EBIRCH Localization on 22 nm SRAM

Electrical Short Identification with EBIRCH

Electrical shorts in devices are detrimental to process yield and performance. Imaging with Electron Beam Induced Resistance Change (EBIRCH) inside an SEM is important to identify these defects.​

EBIRCH analysis on a 22 nm SRAM mechanically polished to contact level. A short was intentionally created in the sample. The image was taken with only 12 nA flowing across the device during analysis. Both fins in a two-fin pulldown device are imaged.

Explore ZEISS GeminiSEM FE-SEM

Recommended Products for Development and Failure Analysis of Advanced Semiconductor Devices

  • FIB-SEM for Most Accurate 3D Reconstruction and TEM/APT Sample Preparation

    ZEISS Crossbeam

    Combine imaging and analytical performance of a high-resolution FE-SEM with the processing ability of a next-generation Ga focused ion beam (FIB). Perform precise cross sections, TEM/APT sample preparation, tomography, imaging, and analytics.

    Explore Crossbeam

    Choose Crossbeam if you need:

    • High resolution, contrast and signal-to-noise ratio, even for low-voltage imaging
    • Prepare delicate samples for TEM and APT analysis
    • Perform accurate 3D imaging and analytics at the nanoscale
    Learn more

  • FIB-SEM to Simplify Automated TEM Sample Preparation

    ZEISS Crossbeam Samplefab

    Achieve fully-automated and unattended TEM sample preparation in your semiconductor lab with ZEISS Crossbeam 550 Samplefab, a robust pre-configured high-end FIB-SEM. Obtain best sample quality and high automation reliability with high lamella success rates, especially for multi-site preparations. Enjoy an intuitive user interface designed for fast learning and optimum efficiency without sacrificing flexibility.

    Explore Crossbeam Samplefab

    Choose Crossbeam Samplefab if you need:

    • Automated TEM sample preparation for optimized results
    • Stable and efficient workflow for maximum success rate
    • User-friendly interface for easy operation
    Learn more

  • FE-SEM for Highest Demands in Sub-nanometer Imaging, Analytics and Sample Flexibility

    ZEISS GeminiSEM
    LSM 990

    Combine excellence in imaging and analytics. Innovations in electron optics and a new chamber design let you benefit from better image quality, usability and flexibility. Take sub-nanometer images below 1 kV without an immersion lens. Discover three unique designs of the ZEISS Gemini electron optics.

    Explore GeminiSEM

    Choose GeminiSEM if you need:

    • High resolution construction analysis and benchmarking
    • Superior passive voltage contrast for fault isolation
    • Subsurface analysis
    • Electrical property measurement with nanoprobing
    Learn more
Learn more about Semiconductor Applications

Semiconductor Lab Essentials

  • Stereo Microscope for Sample Preparation, Surveying and Imaging

    ZEISS Discovery.V8
    Buy or Try the Discovery.V8

    Produce crisp, three-dimensional, distortion-free, colored images. Perfect for digital archiving, sample preparation, basic inspection, or failure analysis

    Trial, get a Quote or Purchase here
Discover more lab essentials

Complete your lab

with our new solution bundles

Streamline sample preparation for your logic and memory devices​

Configure your Stemi 508

Microscopy FAQs for Semiconductors​

ZEISS offers a variety of microscopy techniques tailored for Semiconductors including:
  • Zeiss microscopes, especially the Crossbeam FIB-SEMs, enhance the yield and success of Transmission Electron Microscopy (TEM) lamellae preparation for semiconductor failure analysis through several key features:
    • ​High-Resolution Imaging: Essential for Identifying Target Areas and Assessing Sample Quality.
    • FIB (Focused Ion Beam) Milling: Ga+ focused ion beam – scanning electron microscope (FIB-SEM) for preparing TEM samples with minimal artifacts through simultaneous Imaging while milling and precise end-pointing.
    • Integrated Analytics: Provides additional insights, such as EDS Elemental Analysis, and Real-Time Feedback during milling to allow quick adjustments and quality enhancement of the lamella.
    • Automation: Supports semi-automated and automated TEM lamellae prep workflows, optimizing efficiency, yield and success rates.

  • Electron microscope-based techniques like Passive Voltage Contrast (PVC) and Nanoprobing are crucial for defect localization and electrical fault isolation in semiconductor devices.

    • Passive Voltage Contrast (PVC): Uses SEM to visualize electrical potential differences within semiconductor nanostructures, aiding in defect and fault identification.
    • Nanoprobing: Utilizes sharp probes for precise electrical measurements on specific nanoscale features that can only be observed under an SEM. Key nanoprobing modes include:
      • Electron Beam Absorbed Current (EBAC): Measures current from electron absorption, revealing local electrical properties and tracing carrier path.
      • Electron Beam Induced Current (EBIC): Detects current from electron beam interaction, mapping p-n junctions and electrically active defects.
      • Electron Beam Induced Resistance Change (EBIRCH):  Identifies resistive defects like shorts.

    Zeiss GeminiSEM field-emission SEMs allow for seamless integration of imaging and nanoprobing, enabling real-time observation of the electrical characteristics of the device while simultaneously visualizing its structure.​

    Explore ZEISS GeminiSEM FE-SEM​

    To learn more about electrical defect localization inside an SEM and Passive Voltage Contrast, please listen to our recent webinar.

  • Nanoscale tomography provides high-resolution, three-dimensional imaging of semiconductor structures, allowing for detailed visualization of internal features and defects. This technique enables precise identification and localization of faults, such as voids, inclusions, and interface irregularities, which are critical for understanding failure mechanisms and improving device reliability. ​

    By reconstructing the 3D architecture of semiconductor devices, nanoscale tomography in a focused ion beam scanning electron microscope (FIB-SEM) facilitates a comprehensive analysis of complex structures, aiding in the development and optimization of advanced semiconductor technologies. True z-depth monitoring with high nm-scale resolution, live imaging while milling, isotropic voxels and integrated analytics are few key features to obtain most accurate 3D reconstruction of the complex structure.​

    Explore ZEISS Crossbeam FIB-SEMs