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Advanced Microscopy Solutions

Semiconductor Advanced Packaging and 3D Heterogeneous Integration​

Improve Productivity with Multi-dimensional Correlative Imaging & Analysis​

 

 

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ZEISS at the International Symposium for Testing and Failure Analysis (ISTFA) 2025

Meet with us to learn about the latest advances in 3D X-ray microscopy, FE-SEM, and FIB-SEM solutions for semiconductor failure analysis and process development.

ZEISS @ ISTFA 2025
Microscopy Applications for Advanced Packaging Transistor scaling alone no longer suffices for semiconductor performance and miniaturization. Innovations like 2.5D/3D designs and hybrid bonding enable SIP and heterogeneous integration, posing challenges for failure analysis due to buried defects. ZEISS solutions offer superior imaging, AI-enhanced workflows, and advanced tools for rapid, detailed package analysis.
  • Access to Buried Defects​

    Characterize defects and microstructures of buried defects and interfaces using nondestructive high-resolution 3D X-ray microtomography and laser-assisted FIB cross-section.

  • Faster Time to Results​

    AI-assisted image reconstruction and analysis to get to the actionable results faster without compromising quality of the microscopy images.

  • Connected Data​

    Correlate multi-scale, multi-modal microstructural analyses with electron, X-ray and light microscopy using connected software​.

Advanced Semiconductor Packaging Applications

Novel package technologies are extending Moore’s Law. This enables timely introduction of new processes and faster yield optimization. Our suite of microscopy instruments enables 2D and 3D package analysis at high resolution and high throughput for package development and failure analysis.

Non-destructive 3D Tomography of Heterogeneous Integration Package

Buried defects in interconnect bridge connecting multiple chips can be costly and detrimental to the performance. 3D X-ray imaging and analysis helps in accelerating the failure analysis
3D X-ray Image of Heterogeneous Package

3D X-ray Image of Heterogeneous Package

3D X-ray Image of Heterogeneous Package

3D Reconstructed Image

75 µm C4 bumps and 30 µm microbumps

Virtual Cross Section of Microbumps

Virtual Cross Section of Microbumps

Virtual Cross Section of Microbumps

Virtual Cross Section of Microbumps

30 µm microbumps imaged at 0.8 µm/voxel resolution

Virtual Cross Section of C4 Bumps

Virtual Cross Section of C4 Bumps

Virtual Cross Section of C4 Bumps

Virtual Cross Section of C4 Bumps

75 μm C4 bumps imaged at 0.8 μm/voxel resolution

3D Package Interconnects

3D Package Interconnects

3D Package Interconnects

Rapid Access and Analysis of Deeply Buried Interconnects

Reducing total time to results to less than an hour for accessing deeply buried features can accelerate failure analysis as well as potentially mitigate costly process deviations.

Left: 3D IC prepared using laser ablation and FIB polishing in Crossbeam-Laser.
Right: Backscattered electron image of microbump.

Explore ZEISS Crossbeam-Laser

Large FOV of 2.5D Package Interconnects

Large FOV of 2.5D Package Interconnects

Large FOV of 2.5D Package Interconnects

High-resolution, Extreme Field of View Imaging

Improve productivity and efficiency of package and BEOL structures with distortion-free, large field of view provided by GeminiSEM.

Inset: Close up of 2.5D package cross section shows grain structure and solder crack in 20 µm microbump.

Explore ZEISS GeminiSEM FE-SEM

Intermetallic Layers in Solder Bumps

Intermetallic Layers in Solder Bumps

Intermetallic Layers in Solder Bumps

Intermetallic Layer Analysis of Solder Bumps

Identify interfacial failure with cross-section of a flip-chip solder bump utilizing superior material contrast and channeling contrast of grain structure.

Inset: Failure at the UBM RDL interface.

Explore ZEISS GeminiSEM FE-SEM

Recommended Products for Multi-dimensional Imaging and Analysis of Semiconductor Packages

  • FIB-SEM with Femto-second Laser for Rapid Access to Buried Features and Optimum Sample Preparation

    ZEISS Crossbeam

    Combine imaging and analytical performance of a high-resolution FE-SEM with the processing ability of a next-generation Ga focused ion beam (FIB). Perform precise cross sections, TEM/APT sample preparation, tomography, imaging, and analytics. Correlate with 3D X-ray imaging and reveal buried structures using fs-laser with minimal heat affected zone.

    Explore Crossbeam

    Choose Crossbeam if you need:

    • High resolution, contrast and signal-to-noise ratio, even for low-voltage imaging
    • Prepare delicate samples for TEM and APT analysis
    • Perform accurate 3D imaging and analytics at the nanoscale
    • Access to buried features and defects using a correlative workflow
    Learn more

  • X-ray Microscope for sub-micron Nondestructive 3D Imaging

    ZEISS VersaXRM

    Capture volumetric 3D morphology and microstructure of intact semiconductor packages. Identify buried defects during process technology development and failure analysis. Seamlessly correlate 3D data with SEM and FIB-SEM for site-specific sample preparation.

    Explore VersaXRM

    Choose VersaXRM if you need:

    • AI enabled fast high-resolution 3D scans of IC packages and internal defects
    • Operational efficiency through built-in onscreen guidance, sample intelligence and streamlined workflow
    • Faster time-to-result using large field of view (FOV)
    Learn more

  • FE-SEM for Highest Demands in Sub-nanometer Imaging, Analytics and Sample Flexibility

    ZEISS GeminiSEM
    LSM 990

    Combine excellence in imaging and analytics. Innovations in electron optics and a new chamber design let you benefit from better image quality, usability and flexibility. Take sub-nanometer images below 1 kV without an immersion lens. Discover three unique designs of the ZEISS Gemini electron optics.

    Explore GeminiSEM

    Choose GeminiSEM if you need:

    • High resolution construction analysis and benchmarking
    • Superior passive voltage contrast for fault isolation
    • Subsurface analysis
    • Electrical property measurement with nanoprobing
    Learn more

  • X-ray MicroCT for Advanced Imaging of Embedded Structures and Defects

    ZEISS Xradia Context

    Analyze entire packages and modules using an easy-to-use microCT. A high-array detector enables high resolution of fine details even with relatively large imaging volumes. The system features a large field of view, rapid sample mounting and alignment, streamlined acquisition workflow and fast exposure and data reconstruction times.

    Explore Xradia Context

    Product features

    • 3D nondestructive imaging on entire electronic component
    • Micro-scale failure analysis without cross-sectioning the sample
    • Seamless connection to ZEISS correlative microscopy environment
    Learn more
Learn more about Semiconductor Applications

Semiconductor Lab Essentials

  • Stereo Microscope for Sample Preparation, Surveying and Imaging

    ZEISS Discovery.V8
    Buy or Try the Discovery.V8

    Produce crisp, three-dimensional, distortion-free, colored images. Perfect for digital archiving, sample preparation, basic inspection, or failure analysis

    Trial, get a Quote or Purchase here
Discover more lab essentials

Complete your lab

with our new solution bundles

Streamline sample preparation for your logic and memory devices​

Configure your Stemi 508

Microscopy FAQs for Semiconductors​

ZEISS offers a variety of microscopy techniques tailored for Semiconductors including:
  • Imaging and identification of buried features and defects in 3DHI packages are challenging because of complex multi-layer nano- and micro-structures, sub-micron length scale of defects, heterogeneous materials and the requirement of nondestructive defect localization.​
    ​
    ZEISS X-ray microCT and 3D X-ray microscopes provide the necessary tools and capabilities to overcome the challenges of imaging and identifying buried features and defects in heterogeneous integration packages. Key benefits include sub-micron resolution nondestructive imaging, advanced phase and absorption contrast detection, access and imaging stability for samples of different shapes and sizes, AI-assisted fast high-resolution 3D reconstruction and segmentation.

  • Accessing and analyzing any buried feature and/or defect in a semiconductor package is time consuming and challenging. To access the nano- and micro-scale features inside the chip, delicate but fast milling techniques are necessary. ​

    By combining femto-second laser ablation, FIB-milling, high-resolution imaging and analytics, the Zeiss Crossbeam Laser system facilitates quick access and thorough analysis of buried defects in semiconductor packages, enhancing efficiency and accuracy in defect characterization and failure analysis.

    Explore ZEISS Crossbeam FIB-SEMs

  • Nanoscale tomography provides high-resolution, three-dimensional imaging of semiconductor structures, allowing for detailed visualization of internal features and defects. This technique enables precise identification and localization of faults, such as voids, inclusions, and interface irregularities, which are critical for understanding failure mechanisms and improving device reliability. ​

    By reconstructing the 3D architecture of semiconductor devices, nanoscale tomography in a focused ion beam scanning electron microscope (FIB-SEM) facilitates a comprehensive analysis of complex structures, aiding in the development and optimization of advanced semiconductor technologies. True z-depth monitoring with high nm-scale resolution, live imaging while milling, isotropic voxels and integrated analytics are few key features to obtain most accurate 3D reconstruction of the complex structure.

    Explore ZEISS Crossbeam FIB-SEMs