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Display, LED & Photonics
Advanced Microscopy Solutions

Accelerate Development of Displays, LEDs and Photonic Devices

By accurate microstructural imaging and fault isolation​

 

 

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Advanced Microscopy Solutions for Display, LED and Photonics​ Consumer demand for brighter, interactive display panels drives innovation in the competitive display industry. LCD and rigid OLED technology are now produced at low cost, while premium products feature flexible OLED and microLED displays. These complex systems require advanced microscopy for development and manufacturing. ZEISS offers a fully-correlative portfolio from X-ray to electron microscopy, enterprise software for data sharing, and dedicated workflows for analyzing sensitive materials, accelerating time to market and improving yields.
  • 2D and 3D Imaging​

    Understand physical, chemical and electrical characteristics of complex semiconductor materials and microstructures​

  • Accuracy and Repeatability​

    Automate microscopy workflows to improve reliability and efficiency of device development and failure analysis

  • Connected Data​

    Correlate multi-scale, multi-modal microstructural analyses with electron, X-ray and light microscopy using connected software

Display, LED, and Photonics Applications

Technology innovation is accelerating in display, LED, and photonics to serve diverse and emerging applications. We offer microscopy solutions with automated image acquisition for multimodal, multi-scale analysis to speed time to market and improve production yields of defect-free devices.

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Failure Analysis of Image Sensor

Spatial cracks and other sub-surface defects are challenging to identify without nanoscale 3D tomography. ZEISS Crossbeam accelerates the fault isolation and failure analysis using nm-scale FIB-tomography with isotropic voxels and precise depth monitoring. ​

​The video shows 3D FIB-SEM tomography dataset of an image sensor, with (15 nm)3 voxel size. ​

Explore ZEISS Crossbeam FIB-SEMs

Defect Inspection of Entire Camera Modules

Nondestructive 3D defect inspection for camera modules (e.g., in smartphones) is crucial for process monitoring and failure analysis. ZEISS 3D X-ray imaging technology enables faster turnaround time using unique resolution-at-a-distance (RaaD), various phase and absorption contrast detection and AI-assisted 3D reconstruction and image segmentation.​
3D X-ray Image of Smartphone Camera Module

3D Reconstruction of Smartphone Camera Module

3D X-ray Image of Smartphone Camera Module

3D Reconstruction of Smartphone Camera Module

Camera module acquired at 18 µm/voxel resolution shows CMOS imaging sensor and other mechanical components.

Six Layer Optical Lens Stack with 3D XRM

Smartphone Camera Lens Analysis

Six Layer Optical Lens Stack with 3D XRM

Smartphone Camera Lens Analysis

Virtual cross section focusing on six-layer optical lens stacks imaged at 18 µm/voxel resolution.

Recommended Products for Multi-dimensional Imaging and Analysis of Semiconductor Packages

  • FE-SEM for Highest Demands in Sub-nanometer Imaging, Analytics and Sample Flexibility

    ZEISS GeminiSEM
    LSM 990

    Combine excellence in imaging and analytics. Innovations in electron optics and a new chamber design let you benefit from better image quality, usability and flexibility. Take sub-nanometer images below 1 kV without an immersion lens. Discover three unique designs of the ZEISS Gemini electron optics.

    Explore GeminiSEM

    Choose GeminiSEM if you need:

    • High resolution construction analysis and benchmarking
    • Superior passive voltage contrast for fault isolation
    • Subsurface analysis
    • Electrical property measurement with nanoprobing
    Learn more

  • FIB-SEM with Femto-second Laser for Rapid Access to Buried Features and Optimum Sample Preparation

    ZEISS Crossbeam

    Combine imaging and analytical performance of a high-resolution FE-SEM with the processing ability of a next-generation Ga focused ion beam (FIB). Perform precise cross sections, TEM/APT sample preparation, tomography, imaging, and analytics. Correlate with 3D X-ray imaging and reveal buried structures using fs-laser with minimal heat affected zone.

    Explore Crossbeam

    Choose Crossbeam if you need:

    • High resolution, contrast and signal-to-noise ratio, even for low-voltage imaging
    • Prepare delicate samples for TEM and APT analysis
    • Perform accurate 3D imaging and analytics at the nanoscale
    • Access to buried features and defects using a correlative workflow
    Learn more

  • X-ray Microscope for sub-micron Nondestructive 3D Imaging

    ZEISS VersaXRM

    Capture volumetric 3D morphology and microstructure of intact semiconductor packages. Identify buried defects during process technology development and failure analysis. Seamlessly correlate 3D data with SEM and FIB-SEM for site-specific sample preparation.

    Explore VersaXRM

    Choose VersaXRM if you need:

    • AI enabled fast high-resolution 3D scans of IC packages and internal defects
    • Operational efficiency through built-in onscreen guidance, sample intelligence and streamlined workflow
    • Faster time-to-result using large field of view (FOV)
    Learn more

  • X-ray MicroCT for Advanced Imaging of Embedded Structures and Defects

    ZEISS Xradia Context

    Analyze entire packages and modules using an easy-to-use microCT. A high-array detector enables high resolution of fine details even with relatively large imaging volumes. The system features a large field of view, rapid sample mounting and alignment, streamlined acquisition workflow and fast exposure and data reconstruction times.

    Explore Xradia Context

    Product features

    • 3D nondestructive imaging on entire electronic component
    • Micro-scale failure analysis without cross-sectioning the sample
    • Seamless connection to ZEISS correlative microscopy environment
    Learn more
Learn more about Semiconductor Applications

Semiconductor Lab Essentials

  • Stereo Microscope for Sample Preparation, Surveying and Imaging

    ZEISS Discovery.V8
    Buy or Try the Discovery.V8

    Produce crisp, three-dimensional, distortion-free, colored images. Perfect for digital archiving, sample preparation, basic inspection, or failure analysis

    Trial, get a Quote or Purchase here
Discover more lab essentials

Complete your lab

with our new solution bundles

Streamline sample preparation for your logic and memory devices​

Configure your Stemi 508

Microscopy FAQs for Semiconductors​

ZEISS offers a variety of microscopy techniques tailored for Semiconductors including:

  • ZEISS microscopes, especially the Crossbeam FIB-SEMs, enhance the yield and success of Transmission Electron Microscopy (TEM) lamellae preparation for semiconductor failure analysis through several key features:​

    High-Resolution Imaging: Essential for Identifying Target Areas and Assessing Sample Quality.​

    FIB (Focused Ion Beam) Milling: Ga+ focused ion beam – scanning electron microscope (FIB-SEM) for preparing TEM samples with minimal artifacts through simultaneous Imaging while milling and precise end-pointing.​

    Integrated Analytics: Provides additional insights, such as EDS Elemental Analysis, and Real-Time Feedback during milling to allow quick adjustments and quality enhancement of the lamella.​

    Automation: Supports semi-automated and automated TEM lamellae prep workflows, optimizing efficiency, yield and success rates. ​

    Explore ZEISS Crossbeam FIB-SEMs

  • Nanoscale tomography provides high-resolution, three-dimensional imaging of semiconductor structures, allowing for detailed visualization of internal features and defects. This technique enables precise identification and localization of faults, such as voids, inclusions, and interface irregularities, which are critical for understanding failure mechanisms and improving device reliability. ​

    By reconstructing the 3D architecture of semiconductor devices, nanoscale tomography in a focused ion beam scanning electron microscope (FIB-SEM) facilitates a comprehensive analysis of complex structures, aiding in the development and optimization of advanced semiconductor technologies. True z-depth monitoring with high nm-scale resolution, live imaging while milling, isotropic voxels and integrated analytics are few key features to obtain most accurate 3D reconstruction of the complex structure.

    Explore ZEISS Crossbeam FIB-SEMs

  • Accessing and analyzing any buried feature and/or defect in a semiconductor package is time consuming and challenging. To access the nano- and micro-scale features inside the chip, delicate but fast milling techniques are necessary. ​

    By combining femto-second laser ablation, FIB-milling, high-resolution imaging and analytics, the Zeiss Crossbeam Laser system facilitates quick access and thorough analysis of buried defects in semiconductor packages, enhancing efficiency and accuracy in defect characterization and failure analysis.​

    Explore ZEISS Crossbeam FIB-SEMs