Advanced Defect Localization Techniques in Semiconductor Failure Analysis

In this first session of the ZEISS Microscopy Defect Localization Webinar Series, we spotlight passive voltage contrast (PVC) techniques using ZEISS GeminiSEM. Attendees will explore three key mechanisms for generating PVC in devices, supported by practical examples in both electron and ion microscopy.

Participants will:

• Learn why defect localization is vital for semiconductor failure analysis.
• Explore three PVC mechanisms: capacitance, grounding, and the built-in potential of a p/n junction.
• Consider how the ability to select different energy distributions in ZEISS GeminiSEM enables accurate PVC.
• Get practical tips to optimize PVC techniques and your analysis results.

In the final session, we will present the AFM-in-SEM system. This hybrid tool allows for high-resolution topographic and conductive measurements inside the scanning electron microscope (SEM.) Participants will learn about the usefulness of this tool for precise electrical measurements in tiny spaces inside the SEM. The ability to precisely detect electrical breakthroughs during localized milling will be demonstrated.

Four different aspects of the testing will be explored:

• Topographic measurements, the basic testing regime of AFMs.
• Conductive AFM measurements and the benefits of this system for SRAM analysis (AC bias on the backside with a linear filter).
• Electron beam absorbed current (EBAC) measurement with an AFM tip.
• Use of an AFM tip as a scalpel to clean oxidized surfaces or perform tomographic measurements (while simultaneously milling and collecting conductive AFM data).