![ロジックとメモリー]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.100.100.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.360.360.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.768.768.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/advanced-semiconductor-packaging-microscopy-solutions.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original./advanced-semiconductor-packaging-microscopy-solutions.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original./advanced-semiconductor-packaging-microscopy-solutions.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/advanced-semiconductor-packaging-microscopy-solutions.jpg/_jcr_content/renditions/original./advanced-semiconductor-packaging-microscopy-solutions.jpg"} "ロジックとメモリー")
高度なパッケージ技術と3D不均一集積
サブミクロンスケールのイメージング・解析で生産性を向上
近年の半導体素子の性能向上とシステム縮小には、トランジスタの微細化だけでは不十分です。シリコン貫通電極（TSV）を使った新たな2.5D/3Dデザインやハイブリッド接合を使ったチップレットなど、半導体パッケージ技術の革新によってシステム・イン・パッケージや不均一集積が実現しました。歩留まりの高い確かな製品を開発・生産するには、このような高度な技術の特性評価や故障解析が重要です。
新しいパッケージ構造では、積層下部の欠陥が新たに問題になります。そのため、電気的特性評価から構造解析、原因同定まで、故障解析ワークフロー全体を見直す必要があります。従来の高分解能パッケージ解析ワークフローでは、積層下部の故障解析に必要なスピード、分解能、3D情報が得られません。
不均一集積パッケージの非破壊3Dトモグラフィー解析
![不均一集積パッケージの3D X線イメージング]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.371,8,1651,1288.file/heterogeneous-package-3d-xrm.jpg"} "不均一集積パッケージの3D X線イメージング")
不均一集積パッケージの3D X線イメージング
![不均一集積パッケージの3D X線イメージング]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.75.file/heterogeneous-package-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.270.file/heterogeneous-package-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.576.file/heterogeneous-package-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.769.file/heterogeneous-package-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.961.file/heterogeneous-package-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1081.file/heterogeneous-package-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-3d-xrm.jpg/_jcr_content/renditions/original./heterogeneous-package-3d-xrm.jpg"} "不均一集積パッケージの3D X線イメージング")
不均一集積パッケージの3D解析
複数のチップをつなぐインターコネクトブリッジの3D X線顕微鏡再構築像。
75 µmのC4バンプと30 µmのマイクロバンプがはっきりと見える。
X線顕微鏡ZEISS Xradia Versaで取得
![マイクロバンプの再構築断面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1439.1439.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1439.1439.482,0,1921,1439.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg"} "マイクロバンプの再構築断面")
マイクロバンプの再構築断面
![マイクロバンプの再構築断面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.75.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.270.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.576.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.769.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.961.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1081.file/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-microbumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original./heterogeneous-package-microbumps-cross-section-3d-xrm.jpg"} "マイクロバンプの再構築断面")
マイクロバンプの再構築断面
同じ解析の再構築断面。30 µmのマイクロバンプを0.8 µm/ボクセルの分解能でイメージング。
X線顕微鏡ZEISS Xradia Versaで取得
![C4バンプの再構築断面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.480,0,1920,1440.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg"} "C4バンプの再構築断面")
C4バンプの再構築断面
![C4バンプの再構築断面]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.75.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.270.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.576.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.768.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.960.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg/_jcr_content/renditions/original./heterogeneous-package-c4-bumps-cross-section-3d-xrm.jpg"} "C4バンプの再構築断面")
C4バンプの再構築断面
同じ解析の再構築断面。75 µmのC4バンプを0.8 µm/ボクセルの分解能でイメージング。
X線顕微鏡ZEISS Xradia Versaで取得
ナノスケールでのスマートフォン基板の3D X線イメージング
![スマートフォン主制御盤の3D X線イメージング]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-package-on-package-3d-x-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-package-on-package-3d-x-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-package-on-package-3d-x-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-package-on-package-3d-x-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-package-on-package-3d-x-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-package-on-package-3d-x-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-package-on-package-3d-x-xrm.jpg/_jcr_content/renditions/original./smartphone-package-on-package-3d-x-xrm.jpg"} "スマートフォン主制御盤の3D X線イメージング")
スマートフォン主制御盤の3D X線イメージング
主制御盤全体のX線像
スマートフォン主制御盤のパッケージ・オン・パッケージ（POP）を広い実視野、10 µm/ボクセルで3D X線イメージング。
ZEISS Xradia Context microCTで取得
![スマートフォン主制御盤のソルダーボール]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-control-board-solder-balls-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-control-board-solder-balls-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-control-board-solder-balls-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-control-board-solder-balls-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-control-board-solder-balls-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-control-board-solder-balls-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-balls-3d-xrm.jpg/_jcr_content/renditions/original./smartphone-control-board-solder-balls-3d-xrm.jpg"} "スマートフォン主制御盤のソルダーボール")
スマートフォン主制御盤のソルダーボール
ソルダーボールの再構築断面
同じ解析の再構築断面。バイオニックチップを基板に連結するソルダーボールを10 µm/ボクセルでイメージング。
ZEISS Xradia Context microCTで取得
![スマートフォン主制御盤のソルダーバンプ]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.100.100.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.360.360.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.768.768.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/smartphone-control-board-solder-bumps-3d-xrm.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/smartphone-control-board-solder-bumps-3d-xrm.jpg/_jcr_content/renditions/original./smartphone-control-board-solder-bumps-3d-xrm.jpg"} "スマートフォン主制御盤のソルダーバンプ")
スマートフォン主制御盤のソルダーバンプ
ソルダーバンプの再構築スライス
同じ試料の別の層の再構築断面。3D NANDフラッシュチップを基板に連結するソルダーバンプを10 µm/ボクセルでイメージング。
ZEISS Xradia Context microCTで取得
![3Dパッケージのインターコネクト]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.100.75.file/buried-microbumps-and-beol-laserfib.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.360.270.file/buried-microbumps-and-beol-laserfib.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.768.576.file/buried-microbumps-and-beol-laserfib.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1024.768.file/buried-microbumps-and-beol-laserfib.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1280.960.file/buried-microbumps-and-beol-laserfib.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/buried-microbumps-and-beol-laserfib.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/buried-microbumps-and-beol-laserfib.jpg/_jcr_content/renditions/original./buried-microbumps-and-beol-laserfib.jpg"} "3Dパッケージのインターコネクト")
3Dパッケージのインターコネクト
積層下部にある3Dパッケージのインターコネクトを素早く解析
CrossbeamレーザーFIB-SEMを使うことで、3D集積回路（IC）の860 µmの深さにある直径25 µmのCuピラーマイクロバンプとBEOL構造の詳細な断面像を1時間以内に素早く取得できます。左：レーザー加工とFIB研磨によって調製された3D IC。右：マイクロバンプの後方散乱電子像。
![広い実視野での2.5Dパッケージのインターコネクト]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.100.75.file/extreme-fov-package-interconnects-fe-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.360.270.file/extreme-fov-package-interconnects-fe-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.768.576.file/extreme-fov-package-interconnects-fe-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1024.768.file/extreme-fov-package-interconnects-fe-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1280.960.file/extreme-fov-package-interconnects-fe-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/extreme-fov-package-interconnects-fe-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/extreme-fov-package-interconnects-fe-sem.jpg/_jcr_content/renditions/original./extreme-fov-package-interconnects-fe-sem.jpg"} "広い実視野での2.5Dパッケージのインターコネクト")
広い実視野での2.5Dパッケージのインターコネクト
2.5Dパッケージのインターコネクトを広い実視野で高分解能イメージング
GeminiSEM FE-SEMでは、ひずみのない広い実視野イメージングにより、パッケージやBEOLの構造解析をハイスループットで効率的に実行できます。
挿入画像：2.5Dパッケージの断面の拡大。20 µmマイクロバンプ内に粒子構造やソルダークラックがみられます。
![ソルダーバンプ内の金属間化合物層]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.100.75.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.360.270.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.768.576.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1024.768.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1280.960.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original.image_file.1440.1080.file/solder-bump-intermetallic-layer-imaging-fe-sem.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/applications/electronics-and-semiconductor/microscopy-solutions-for-semiconductor-and-electronics/solder-bump-intermetallic-layer-imaging-fe-sem.jpg/_jcr_content/renditions/original./solder-bump-intermetallic-layer-imaging-fe-sem.jpg"} "ソルダーバンプ内の金属間化合物層")
ソルダーバンプ内の金属間化合物層
ソルダーバンプ内の金属間化合物層の解析
フリップチップ実装によるソルダーバンプの断面。材料コントラスト、粒子構造のチャネリングコントラスト、接着がみられます。
挿入画像：UBM-RDL界面の接着不良。
GeminiSEM FE-SEMでイメージング
![ZEISS Crossbeam - 3D分析と試料作製を高いスループットで実現するFIB-SEM]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.100.100.file/crossbeam-550-system.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.360.360.file/crossbeam-550-system.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.768.768.file/crossbeam-550-system.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/crossbeam-550-system.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/crossbeam-550-system.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/crossbeam-550-system.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/fib-sem/crossbeam/crossbeam-550-system.jpg/_jcr_content/renditions/original./crossbeam-550-system.jpg"} "ZEISS Crossbeam")
![ZEISS GeminiSEMファミリー]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.100.100.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.360.360.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.768.768.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.1024.1024.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.1280.1280.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.1353.1353.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/products/electron-ion/sem/geminisem/zeiss_gemini-sem-stage.jpg/_jcr_content/renditions/original.image_file.1353.1353.285,86,1638,1439.file/zeiss_gemini-sem-stage.jpg"} "ZEISS GeminiSEMファミリー")
![ZEISS Xradia Context microCT]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.100.100.420,0,1500,1080.file/context_product.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.360.360.420,0,1500,1080.file/context_product.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.768.768.420,0,1500,1080.file/context_product.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.1024.1024.420,0,1500,1080.file/context_product.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.1080.1080.420,0,1500,1080.file/context_product.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.1080.1080.420,0,1500,1080.file/context_product.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-context-microct/context_product.jpg/_jcr_content/renditions/original.image_file.1080.1080.420,0,1500,1080.file/context_product.jpg"} "ZEISS Xradia Context microCT")
![ZEISS Xradia Versa XRM]({"xsmall":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/xradia-610-620-versa/xradia-630-versa.jpg/_jcr_content/renditions/original.image_file.100.100.file/xradia-630-versa.jpg","small":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/xradia-610-620-versa/xradia-630-versa.jpg/_jcr_content/renditions/original.image_file.360.360.file/xradia-630-versa.jpg","medium":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/xradia-610-620-versa/xradia-630-versa.jpg/_jcr_content/renditions/original.image_file.768.768.file/xradia-630-versa.jpg","large":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/xradia-610-620-versa/xradia-630-versa.jpg/_jcr_content/renditions/original.image_file.1024.1024.file/xradia-630-versa.jpg","xlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/xradia-610-620-versa/xradia-630-versa.jpg/_jcr_content/renditions/original.image_file.1280.1280.file/xradia-630-versa.jpg","xxlarge":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/xradia-610-620-versa/xradia-630-versa.jpg/_jcr_content/renditions/original.image_file.1440.1440.file/xradia-630-versa.jpg","max":"https://www.zeiss.com/content/dam/rms/reference-master/products/xradia/xradia-versa/xradia-610-620-versa/xradia-630-versa.jpg/_jcr_content/renditions/original./xradia-630-versa.jpg"} "ZEISS Xradia Versa XRM")
ダウンロード
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ZEISS Xradia Context microCT
3D submicron-resolution X-ray microCT with superior image quality
ファイルサイズ: 1 MB -
Hitting Defects Accurately Through Correlation
A Case Study of Sparse-Particle Analysis in a Bulk Material
ファイルサイズ: 1 MB
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Flyer: ZEISS DeepRecon Pro
電子機器の不良解析のための 高速 3D X 線データ取得と 優れたイメージング品質
ファイルサイズ: 9 MB -
ZEISS Crossbeam laser FIB-SEM
Rapidly access site-specific features buried deeply within IC packages
ファイルサイズ: 1 MB -
ZEISS Xradia Versa Family
Complete your failure analysis workflow with high-resolution, non-destructive imaging
ファイルサイズ: 710 KB -
ZEISS Xradia Versa 3D Xڸඍݦઢ
次世代エレクトロニクスの不良解析と プロセス開発を加速
ファイルサイズ: 7 MB
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![ZEISS Xradia Context microCTのプレビュー画像]({"max":"https://asset-downloads.zeiss.com/catalogs/preview/mic/f880a917-7f29-4c15-895c-49a5d651de71/EN_product-flyer_Xradia-Context-for-semiconductor.pdf.jpg"} "ZEISS Xradia Context microCTをダウンロード")
![Hitting Defects Accurately Through Correlationのプレビュー画像]({"max":"https://asset-downloads.zeiss.com/catalogs/preview/mic/faf73da3-17c2-41d7-af74-2feb578188a4/EN_wp_Cut2ROI-2.pdf.jpg"} "Hitting Defects Accurately Through Correlationをダウンロード")
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