SMS Metrology Solutions - ZEISS PROVE systems
Photomask metrology solutions

ZEISS PROVE You can correct what you can measure.

The image placement remains an important aspect of photomask metrology. Not only the position accuracy of features for an individual mask – representing one layer in a complete chip design – have to meet stringent requirements. The complete mask set for all layers have to match in order to get a functional device. The photomask registration and overlay metrology system ZEISS PROVE measures image placement with sub-nanometer repeatability and accuracy ensuring perfect image placement.

  • Allows for high precision pattern placement metrology
  • Excellent mask to wafer correlation
  • Enables EUV lithography
  • Supports EUV defect mitigation strategy
  • SMS Metrology Solutions - ZEISS PROVE systems

    Complex mask structure 

  • SMS Metrology Solutions - ZEISS PROVE systems

    Contact holes
     

  • SMS Metrology Solutions - ZEISS PROVE systems

    Complex mask structure

  • SMS Metrology Solutions - ZEISS PROVE systems

    Complex mask structure 

  • SMS Metrology Solutions - ZEISS PROVE systems

    Contact holes

  • SMS Metrology Solutions - ZEISS PROVE systems

    Complex mask structure

High resolution registration and overlay metrology system

With the introduction of multi-pattering schemes most difficult layers in terms of critical dimensions have to be split into separate layouts and overlayed with each other. These tasks require registration metrology tools which employ high resolution capabilities and yet unprecedented specifications on reproducibility and accuracy for precise image placement measurements.

  • PROVE® neXT

    PROVE® neXT The leading-edge registration and overlay metrology system

    PROVE® neXT offers proven best in class repeatability and accuracy for mask manufacturing as well as Multibeam and VSB calibration.

    • It works with a litho-grade 193nm optics for lowest aberrations.
    • The system offers a better resolution than any other optical registration measurement tool with an NA of 0.8 for the measurement of smallest production features.
    • All types of photo and nano–imprint masks can be precisely measured without loss of image contrast.
    • A fast throughput can be realized for all measurement tasks including local registration map (LRM).
  • Digital Solutions

    Digital Solutions

    Running on the computational engine FAVOR®

    The FAVOR® platform enables productivity and reliability enhancement through intelligent automation.

    • Local Registration Map (LRM) — It is a new measurement mode for PROVE® that allows to measure registration in a macroscopic field instead of tiny features. This will be especially helpful to calibrate mask writers.
High precision pattern placement metrology

Accurate pattern placement

To realize advanced lithography techniques

The introduction of multibeam writing tools has opened a new path towards higher pattern complexity as required for Invers Lithography (ILT) and EUVL while not compromising throughput. Today’s leading-edge tools allow for pattern placement accuracy below 1nm at mask level. To get calibrated and tuned to that performance level these tools fully rely on low metrology noise registration tools.

ZEISS PROVE neXT was designed to address these needs with unparalleled repeatability and high sampling rate at the same time.

Excellent mask to wafer correlation

Excellent mask to wafer correlation

For meeting tightest overlay specifications

As proven by the leading supplier of lithography equipment for EUV as well as DUV lithography, ZEISS PROVE provides excellent mask to wafer correlation, crucial for any further overlay optimization at FAB’s.

Measurement and Evaluation of Mask Flatness

Enables EUV lithography

Measurement and Evaluation of Mask Flatness

Controlled by highly precise interferometry for all dimensions in space, ZEISS PROVE can additionally evaluate mask flatness for patterned and unpatterned masks as needed for EUV lithography. It provides combined registration data for X, Y and Z for further overlay optimization in FAB’s.

Localization of blank and absorber defects on EUV reticles

Supports EUV defect mitigation strategy

Localization of blank and absorber defects on EUV reticles

Beside photomask registration, ZEISS PROVE neXT is supporting the EUV defect mitigation strategy. Due to its inherent stage accuracy and resolution power, it can precisely localize blank and absorber defects on EUV reticles.

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