You can correct what you can measure.
The image placement remains an important aspect of photomask metrology. Not only the position accuracy of features for an individual mask – representing one layer in a complete chip design – have to meet stringent requirements. The complete mask set for all layers have to match in order to get a functional device. The photomask registration and overlay metrology system ZEISS PROVE measures image placement with sub-nanometer repeatability and accuracy ensuring perfect image placement.
The leading-edge registration and overlay metrology system
PROVE® neXT offers proven best in class repeatability and accuracy for mask manufacturing as well as Multibeam and VSB calibration.
Running on the computational engine FAVOR®
The FAVOR® platform enables productivity and reliability enhancement through intelligent automation.
Accurate pattern placement
To realize advanced lithography techniques
The introduction of multibeam writing tools has opened a new path towards higher pattern complexity as required for Invers Lithography (ILT) and EUVL while not compromising throughput. Today’s leading-edge tools allow for pattern placement accuracy below 1nm at mask level. To get calibrated and tuned to that performance level these tools fully rely on low metrology noise registration tools.
ZEISS PROVE neXT was designed to address these needs with unparalleled repeatability and high sampling rate at the same time.
Excellent mask to wafer correlation
For meeting tightest overlay specifications
As proven by the leading supplier of lithography equipment for EUV as well as DUV lithography, ZEISS PROVE provides excellent mask to wafer correlation, crucial for any further overlay optimization at FAB’s.
Enables EUV lithography
Measurement and Evaluation of Mask Flatness
Controlled by highly precise interferometry for all dimensions in space, ZEISS PROVE can additionally evaluate mask flatness for patterned and unpatterned masks as needed for EUV lithography. It provides combined registration data for X, Y and Z for further overlay optimization in FAB’s.
Supports EUV defect mitigation strategy
Localization of blank and absorber defects on EUV reticles
Beside photomask registration, ZEISS PROVE neXT is supporting the EUV defect mitigation strategy. Due to its inherent stage accuracy and resolution power, it can precisely localize blank and absorber defects on EUV reticles.