EUV lithography has become integral to modern devices, with High-NA-EUV scanners advancing exposure technology through enhanced image contrast and reduced defect rates. Despite these advancements, producing defect-free reticles remains challenging. The AIMS® EUV system is essential for evaluating mask printing performance, emulating critical scanner properties such as mask-side NA and illumination schemes. Recent upgrades have expanded its capabilities. To meet evolving industry needs, ZEISS SMT introduces the AIMS® EUV 3.0, a next-generation mask review tool offering improved productivity and cost efficiency. It supports both 0.33NA isomorphic and 0.55NA anamorphic imaging, building on proven optical performance. This paper presents imaging results from the AIMS® EUV 3.0, focusing on anamorphic High-NA-EUV lithography masks and analyzing its 0.55NA imaging properties. We highlight measurement performance and explore applications beyond standard defectivity assessments.
Speaker: Sven Krannich, ZEISS Semiconductor Manufacturing Technology