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SPIE Photomask Technology and EUV Lithography 2022

Monterey Conference Center and Monterey Marriott

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SPIE Photomask Technology and EUV Lithography 2022

ZEISS Program Highlights

SPIE Photomask Technology + Extreme Ultraviolet Lithography is the premier worldwide technical meeting for photomasks, patterning, metrology, materials, inspection/repair, mask business, extreme UV lithography, and emerging technologies.

ZEISS is actively contributing to the Conference. Please find an overview of our technical contributions in the following.

Enabling Process optimization for EUV Phase Shift Masks using AIMS® EUV Phase metrology presented by Dr. Renzo Capelli

Specifically designed for actinic defect review and repair verification of EUVL photomasks at 13.5nm wavelength, AIMS® EUV is an established industry standard and proven technology. In the last year, the system has been extended to other applications options beyond the native mask defectivity review, such as the metrology of EUV Phase Shift Masks (PSM).
In this paper we will describe the challenges of enabling a precise metrology for the mask phase and will investigate the advantages of employing EUV phase metrology capability as process of record in the mask shop for different engineering and production steps: etch control, imaging optimization and wafer process window enhancement.

Aerial image metrology (AIMS) based mask-model accuracy improvement for computational lithography presented by Nitesh Pandey

Accuracy of aerial image (AI) modeling has long been considered a cornerstone of computational lithography, and accurate representation of the mask- input to the AI model- been recognized as a major factor in OPC model accuracy. Accurate mask models are required for mask layout optimization (OPC) as well as process optimization (MPC). Recent progress in stochastics modeling also relies on AI parameters such as ILS and peak intensities. In this paper we assess capabilities of the Zeiss EUV-AIMS tool, which is well established for mask defect review, as a metrology solution to quantify AI profiles and calibrate or verify mask model parameters such as bias, corner rounding and m3d options – and their impact on imaging effects, e.g., pattern sizing and pattern or best focus shifts. We collect AIMS images from a subset of a typical OPC model calibration set, with wide pattern coverage: >140 patterns, 1D and 2D, with and without SRAFs. AI-CDs are generated at multiple thresholds to probe.

EUV optics at ZEISS: status and outlook presented by Dr. Bartosz Bilski

To enable the future generations of chips, with even smaller feature sizes than what we currently have on the market, ZEISS and ASML are developing a new generation of EUV tools, where the numerical aperture (NA) of their optics is increased from the current 0.33 to 0.55. These high-NA tools will allow the shrink prescribed by the Moore's Law to continue well into this decade, by allowing the lithographers to print 8nm half-pitch in a single exposure. In this presentation we will remind briefly on high-NA optics concepts as compared to its 0.33-NA predecessor. We will give insight into how advanced the current production status at ZEISS is: not only into mirror surface polishing, coating, metrology, but also mirror handling and integration as well as shipment. Moreover, besides what happens in high-NA program, you will also see the current status and ongoing improvements to 0.33-NA optics.

Direct correlation between mask registration and on-wafer measurements for individual logic device features presented by Richard J. F. van Haren

In all investigations that we performed over the past years, it has been clearly demonstrated that the off-line mask-to-mask overlay as determined on the Zeiss PROVE tool correlates very well with the on-wafer measurements. An excellent correlation (R2 > 0.96) was shown over a range of ~3-nm at wafer level. After this initial success, we continued the investigation by considering µ-DBO (Diffraction Based Overlay) metrology targets that can be readout on an ASML Yieldstar (YS:375) overlay metrology tool. In this follow-up work, we explore the correlation between mask registration measurements and and on-wafer measurement for individual device features. We show that the way the mask has been written can indeed be found back on wafer! Although the local placement errors for a single logic device feature is in the order of ~0.5-nm at wafer level, we show that the correlation between mask measurements and wafer measurement still holds.

The power of algorithmic employed in a metrology system: AIMS® EUV Digital Flex Illu by Dr. Renzo Capelli

In order to contain complexity during the AIMS EUV system illuminator design, the SMO functionality for the illuminator was set aside and replaced by a more immediate and cost-effective mechanical aperture stop concept. Until recently, the realization of complex SMO schemes in AIMS® EUV could only be realized by coding a scanner SMO pupil into an imaging-based optimized mechanical aperture. Digital Flex Illu is a fully digital solution which provides SMO functionality to the AIMS® EUV system by combining an adaptation of the already built-in system metrology with a powerful algorithm without changing the hardware. In this paper, we will present the concept of Digital Flex Illu functionality together with showing imaging results obtained on the AIMS® EUV prototype system. This digital solution allows ZEISS to guarantee an agile roadmap for the AIMS® EUV with limited development effort and great benefits in sustainability and roadmap scaling.

Picture of speaker Renzo Capelli

Dr. Renzo Capelli

Carl Zeiss SMT GmbH, Intel Cooperation

"Enabling Process optimization for EUV Phase Shift Masks using AIMS® EUV Phase metrology"


"The power of algorithmic employed in a metrology system: AIMS® EUV Digital Flex Illu"


Picture of Speaker Nitesh Pandey

Nitesh Pandey


"Aerial image metrology (AIMS) based mask-model accuracy improvement for computational lithography"

Picture of Speaker Bartosz Bilski

Dr. Bartosz Bilski

Carl Zeiss SMT GmbH

"EUV optics at ZEISS: status and outlook"

Picture of the speaker Richard J. F. van Haren

Richard J. F. van Haren

ASML Netherlands B.V.

"Direct correlation between mask registration and on-wafer measurements for individual logic device features"

Experience ZEISS at the SPIE

Photomask Technology + EUV Lithography

ZEISS Booth #204

ZEISS Booth #204

Meet experts during the technical exhibition!

As usually you can discuss during the technical exhibition at booth #204 with our product specialists for mask repair, qualification, EUV and Digital Solutions.

Date: Tuesday 9/27 & Wednesday 9/28

Time: 10:00 am to 4:00 pm

SPIE Photomask Technology and EUV Lithography 2022

Event Location

Monterey Conference Center 1 Portola Plaza 93940 Monterey CA USA