EUV lithography has become integral to modern devices, with High-NA-EUV scanners advancing exposure technology through enhanced image contrast and reduced defect rates. Despite these advancements, producing defect-free reticles remains challenging. The AIMS® EUV system is essential for evaluating mask printing performance, emulating critical scanner properties such as mask-side NA and illumination schemes. Recent upgrades have expanded its capabilities. To meet evolving industry needs, ZEISS SMT introduces the AIMS® EUV 3.0, a next-generation mask review tool offering improved productivity and cost efficiency. It supports both 0.33NA isomorphic and 0.55NA anamorphic imaging, building on proven optical performance. This paper presents imaging results from the AIMS® EUV 3.0, focusing on anamorphic High-NA-EUV lithography masks and analyzing its 0.55NA imaging properties. We highlight measurement performance and explore applications beyond standard defectivity assessments.

Speaker: Sven Krannich, ZEISS Semiconductor Manufacturing Technology 

We introduce an advanced nano manipulator based dry-cleaning process for all types of advanced photomasks, enhanced by live SEM imaging for process supervision. Our innovative approach allows for the repair of a broad range of particle defects using manipulator based nanomanipulation and matches even the demands of High-NA-EUV Lithography. Additionally, electron induced chemistry can be used to augment particle manipulation and removal, ensuring cleaning without compromising mask integrity.

Speaker: Christof Baur, ZEISS Semiconductor Manufacturing Technology

Hyper-NA, with a numerical aperture (NA) of at least 0.75, is the potential successor to the NXE:3x00 and EXE:5x00-series of scanners. This presentation describes the concept for the actual implementation of the Hyper-NA system. Unlike the significant increase in system size going from NXE:3x00 to EXE:5x00, the Hyper-NA machine footprint will hardly increase further, facilitating introduction in the fab. The two risks frequently associated with increased NA are 3D-effects at the reticle and polarisation effects at the wafer. This presentation will outline the proposed mitigation strategies employed in the Hyper-NA concept.

Speaker: Michael Patra, ZEISS Semiconductor Manufacturing Technology