ZEISS GeminiSEM for Semiconductors

Efficient solutions for your challenges.

In semiconductor failure analysis, you encounter common obstacles—complex setups, time-consuming recalibrations, and tools that slow you down. It's time to streamline your workflow.

Streamline your workflow now!

ZEISS GeminiSEM is designed to simplify your process - eliminating unnecessary complexities and increasing efficiency. Say goodbye to repetitive adjustments, manual navigation, and slow workflows. From low kV imaging to seamless beam transitions, every feature is engineered to help you achieve more with less effort.

This isn’t just another microscope. It’s the start of a new standard. Easier workflows. Faster results. All with the precision you need to get the job done right.

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Low kV, High Impact.
Preserve image quality even at low beam energy.

Advanced semiconductor devices require ultra-low kV imaging to protect delicate structures. However, traditional tools often introduce unnecessary complexity, resulting in longer cycle times.

Image: NAND memory block imaged at 200V
Gemini column technology provides industry-leading low kV performance, enabling you to capture high-quality images of sensitive structures faster and with less effort. Minimize time spent managing your equipment and focus more on advancing your analysis.

Image: 50nm Photoresist array

View of a 7 nm device in a SRAM area being probed with a GeminiSEM at 80 eV.

View of a 7 nm device in a SRAM area being probed with a GeminiSEM at 80 eV.
Electron Beam Absorbed Current (EBAC) image contains information about the interconnectivity of sub-surface wiring and the buried p/n junctions.

Electron Beam Absorbed Current (EBAC) image contains information about the interconnectivity of sub-surface wiring and the buried p/n junctions.

GeminiSEM: Achieve More, Beyond Imaging

GeminiSEM sets a new benchmark in fault isolation and electrical characterization with its precision and reliability. Its field-free optics and low beam dose imaging performance enable simple navigation to even the smallest contacts for transistor measurements without affecting the electronic properties of the device.

For defect localization, the exceptional beam stability ensures best-in-class contrast for Electron Beam Induced Current (EBIC), Electron Beam Absorbed Current (EBAC), and Electron Beam Induced Resistance Change (EBIRCH). The large field of view accelerates the search for defects and enables engineers to make confident, data-driven decisions under tight deadlines.

Your Next Defect Discovery Deserves A Clearer View.

See more. Solve faster.

Advanced semiconductor devices demand precise imaging to identify defects. But conventional detectors make it hard to see every detail when it matters most.

ZEISS advanced detectors, including the Rapid BSD and ESB detector, deliver superior imaging capabilities. The Rapid BSD enhances high-kV imaging with subsurface sensitivity, while the ESB detector provides high-contrast imaging for materials analysis and topography. Reduced noise and enhanced clarity allow for better insight into your analysis.

Focus Less on Refocusing.

Change the beam. Keep the flow.

Switching between beam energies should not disrupt your workflow. Yet, many systems require refocusing, stigmation adjustments, and realignment each time you change the beam, which wastes valuable time.

With our precise system calibration and stable column, beam transitions happen smoothly without sacrificing focus or field of view. This minimizes downtime and keeps your work progressing efficiently.

Navigate Seamlessly. Stay Locked on Your Target.

Switch between LM and EM effortlessly—and back again.

Light microscopy (LM) is your reference tool along multiple steps in the FA workflow. LM can give you insights into defects that electron microscopes (EM) cannot see, and vice versa. For navigation, communication and reporting, it is helpful to be able to correlate between LM and EM images.

ZEISS’ correlated microscopy lets you jump from LM to EM in just a few clicks. No manual matching, no wasted time. You get to the exact area you need faster, so you can diagnose issues and close out jobs with precision and speed.

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Get the insights you need to optimize every step of your analysis.

Download our technical compendium for a closer look at how ZEISS GeminiSEM enhances fault isolation and electrical characterization—from precise measurements to fast and reliable defect localization.

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Redefining Standards. Rethinking Possibilities.