Advanced Microscopy for Electronic Materials & Semiconductor Packages

Parallel advances in FIB-SEM and 3D X-ray microscopy have radically changed sample preparation, characterization and failure analysis of semiconductor devices and packages.  

  • Achieve unprecedented 3D X-ray image quality at high speed using artificial intelligence
  • Find the “needle in the haystack” with correlative software and efficient workflows
  • Speed up sample preparation by integrating a femtosecond laser onto a FIB-SEM
  • Unlock new approaches to provide greater insights into semiconductor research, development and failure analysis

Learn more by interacting with the flashing dots

Transform Your Sample Prep and Site-specific Analysis with Efficient Workflows


Learn how ZEISS Xradia 3D X-ray microscopes enable high-resolution imaging even on large semiconductor packages and 300mm wafers.


Read how faster 3D X-ray data acquisition and superior imaging quality is enabled for electronics failure analysis.


Laser ablated recast material is confined in a dedicated process chamber for long-term system reliability and highest imaging resolution. Removal of laser debris is fast and easy.


Innovative cross-jet technology maintains a clear optical path for consistent ablation rates and fast hands-free processing of large volumes or multiple sites.


Efficient and accurate stage movements promote fast "cut and view" cycles and aid quick process optimization. Workflows 2X faster than PFIB laser workflows enable a doubling of FIB capacity.


Rapidly create fiducials anywhere on the sample for accurate fast sample prep and site-specific analysis.


Crossbeam LaserFIB is an effective "packaging FIB" designed for rapid access to buried interconnects in 3D packages with maximum speed and minimal artifacts


Go from macro to nano in femtoseconds using a FIB-SEM with integrated fs-laser.

• Remove cubic millimeters of material athermally by fs-laser ablation

• Perform high-resolution electron imaging and analysis

• Precisely prepare targeted cross-sections, atom probe samples or TEM lamella using live SEM imaging during Ga ion milling


See how high-resolution 3D X-ray microscopy can deliver high resolution at 4X faster speeds.

New Technology Insights for Materials Characterization & Failure Analysis

Two webinars deliver rich insights into the latest microscopy advances and how they work together to enable materials characterization and failure analysis for the next generation of electronic packages and devices.

  • Webinar 1

    Advanced Package Analysis Solutions for the More-than-Moore Era

    The slowing of Moore’s Law continues to present challenges for integrated circuit (IC) package characterization and failure analysis (FA). Package developers and failure analysts are faced with complex System-in-Package (SiP) architectures enabled by heterogenous integration, package interconnect pitches approaching one micron, buried silicon and system-on-chip (SOC) disaggregation, leading to larger package footprints approaching 100mm x 100mm or larger. These trends drive requirements for new capabilities across the entire FA workflow. New ZEISS solutions addressing IC package analysis challenges will be presented including artificial intelligence for 3D X-ray imaging and a new “packaging FIB”, the Crossbeam laser. These technologies represent significant advancements for the package FA workflow.

  • Webinar 2

    Application of Ultra-Short Pulsed (USP) Lasers for Improved Microscopy Sample Preparation

    A new instrument that integrates a femtosecond laser with a FIB-SEM (also known as a LaserFIB) is revolutionizing sample preparation for microelectronics, as well as other industrial and research fields. Join this 1-hour webinar to learn about LaserFIB applications and understand how it compares to sample preparation tools such as broad ion beam (BIB), standalone ps-laser and integrated PFIB laser instruments.

Emerging New Capabilities

Explore how Crossbeam laser provides powerful solutions for failure anaylsis, construction analysis and materials characterization

  • Electrically Isolate Buried Defects

    Finding the Underlying Issue

    Fault isolation and root-cause analysis in a failed electronic component can be extremely challenging and time consuming. The latest generation of chips employ advanced packaging techniques to enable heterogenous integration. Multi-die system-in-package (SIP) and chiplets can ease the design burden but complicate the package and subsequently, the failure analysis (FA) workflow. Deeply buried defects and access to electrical contacts can be particularly problematic as shrinking wire bond and ball/via pitch push the limits of electrical isolation.

    Download the latest ZEISS case study to learn about a correlative workflow combining high-resolution 3D X-ray microscopy and FIB-SEM featuring an integrated femtosecond-pulsed laser to identify and isolate a deeply buried electrical connection with micron-level accuracy.

Explore Related Applications

  • ZEISS Crossbeam laser FIB-SEM

    Rapidly access site-specific features buried deeply within IC packages

    File size: 1 MB
  • Hitting Defects Accurately Through Correlation

    A Case Study of Sparse-Particle Analysis in a Bulk Material

    File size: 1 MB
  • Developments in Advanced Packaging Failure Analysis using Correlated X-ray Microscopy and LaserFIB

    File size: 1 MB

Why integrate a laser with a Ga FIB instead of a PFIB?

Ga focused ion beams are cost effective and highly versatile: powerful enough today to polish a few hundred microns area, yet precise enough for 10 nm thick lamella preparation or 3D tomography with <5 nm isotropic voxel resolution. High quality fs-laser processing requires only minor FIB polishing at low currents, where a Ga beam has 35 times greater current density than a PFIB. This makes a Ga FIB the most effective technology for the broadest range of applications.

Why is an integrated-laser FIB-SEM so transformative?

The LaserFIB enables things that could never be done before, leading to higher productivity and new applications. Do you want 2X faster atom probe prep with higher sample quality than normal? Do you need to locate and image rare defects randomly distributed within a large volume? Do you need multiscale and multimodal analysis at timescales that enable statistical sampling for new material development? How about receiving large-area analytical results at unheard of speeds? This is just a small sampling of the new capabilities.

What problem is addressed by an integrated laser FIB?

There is growing need for material and device characterization across length scales in microelectronics, battery research, and other industries. This includes a need to accurately perform nanoscale analysis, at site-specific regions contained within mm volumes of material, at faster rates than classical Ga and plasma FIB (PFIB) technologies allow.

Why integrate a femtosecond laser into a FIB-SEM?

The LaserFIB architecture provides laser processing under vacuum conditions tailored for best quality, enabling rapid SEM imaging and visual feedback for process set-up and optimization. Laser integration enables automation and high productivity, while conserving floor space and cost of ownership.

How can we help you?

Contact us to speak directly with a ZEISS representative about the specific needs of your facility​.

Form is loading...