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Advanced Microscopy Solutions

Expedite Complex Semiconductor Materials and Structures

With Accurate Failure Analysis

 

 

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Advanced Microscopy Solutions for Complex Semiconductors​ The mobile communication, IoT, cloud computing, and automotive electrification industries demand high-performing “More than Moore” semiconductor devices, integrating new materials, processes, and novel architectures like MEMS. Direct and wide band gap materials (GaAs, SiC, GaN) present challenges for equipment manufacturers and fabricators. To expedite development and market entry, manufacturers need advanced analysis tools. ZEISS offers non-destructive X-ray, electron, and light microscopy solutions, enterprise-ready software for collaborative workflows, and expert support in optics, electronics, and material science.​
  • 2D and 3D Imaging​

    Understand physical, chemical and electrical characteristics of complex semiconductor materials and microstructures​

  • Accuracy and Repeatability​

    Automate microscopy workflows to improve reliability and efficiency of device development and failure analysis

  • Connected Data​

    Correlate multi-scale, multi-modal microstructural analyses with electron, X-ray and light microscopy using connected software

  • GaN HEMT Backside Lamella Bright Field

    Bright Field (BF), mass-thickness contrast

    GaN HEMT Backside Lamella Bright Field

    Bright Field (BF), mass-thickness contrast

    Bright Field (BF), mass-thickness contrast
  • GaN HEMT Backside Lamella Annular Dark Field

    Annular Dark Field (ADF), inverted mass-thickness contrast

    GaN HEMT Backside Lamella Annular Dark Field

    Annular Dark Field (ADF), inverted mass-thickness contrast

    Annular Dark Field (ADF), inverted mass-thickness contrast
  • GaN HEMT Backside Lamella HAADF

    High Angle Annular Dark Field (HAADF), atomic number contrast

    GaN HEMT Backside Lamella HAADF

    High Angle Annular Dark Field (HAADF), atomic number contrast

    High Angle Annular Dark Field (HAADF), atomic number contrast
  • GaN HEMT Backside Lamella Oriented Dark Field

    Oriented Dark Field (ODF), strong crystal orientation contrast

    GaN HEMT Backside Lamella Oriented Dark Field

    Oriented Dark Field (ODF), strong crystal orientation contrast

    Oriented Dark Field (ODF), strong crystal orientation contrast

Backside Thinned Lamellae Preparation and STEM Imaging

GaN on Si

It is challenging to precisely thin a lamellae of a GaN high electron mobility transistor (HEMT). Using different segments of the STEM detector in ZEISS Crossbeam, it is possible to ensure lamellae quality and the precision of the backside thinning process.

IGBT Cross Section and EDX Map

Cross Section and EDX of IGBT Device​

IGBT Cross Section and EDX Map

Failure Analysis of IGBT Device​

Microstructural and chemical examination of the edge of a gate in an Insulated Gate Bipolar Transistor (IGBT) device requires precise lamellae preparation and optimum EDS analysis. ​

ZEISS Crossbeam enables the complete workflow from lamellae preparation to STEM-in-SEM imaging to EDS analysis. Image showing correlative data, identifying crystalline Si precipitates.

Explore ZEISS Crossbeam FIB-SEM

SiC MOSFET Dopant Profile

Dopant Profile Image of SiC MOSFET

SiC MOSFET Dopant Profile

Voltage Contrast Imaging of Dopant Profile in a SiC MOSFET

Accurately determining semiconductor junction health and placement is important for performance of a SiC MOSFET device. ​

​Cleaved SiC MOSFET device imaged at 1.5 kV in a ZEISS SEM. The image strongly highlights different implant doping regions due to the difference in work functions. The N+ diffusion is shown as a dark band underneath and extending to either side of the gate. The P-type body region is highlighted as a bright zone.

Explore ZEISS GeminiSEM FE-SEM

Nondestructive 3D Imaging of Gyroscope/Accelerometer

In order to identify failures in a semiconductor MEMS device, like an accelerometer, it is important to nondestructively image the sample with sub-micron resolution.​ ​ZEISS Versa 3D X-ray microscopes – with its resolution-at-a-distance technology – reveals the nanoscale structures of the MEMS, even within an electronic product.
3D Image of Accelerometer - MEMS

3D Analysis of Smartphone Gyroscope / Accelerometer

3D Image of Accelerometer - MEMS

3D Analysis of Smartphone Gyroscope / Accelerometer

Plan View of Accelerometer MEMS Fine Comb Fins

High-resolution Image Fine Comb Fin

Plan View of Accelerometer MEMS Fine Comb Fins

High-resolution Image Fine Comb Fin

Accelerometer MEMS Fine Comb Fins Cross Section

Virtual Slice of Fine Comb Fins

Accelerometer MEMS Fine Comb Fins Cross Section

Virtual Slice of Fine Comb Fins

Recommended Products for Multi-dimensional Imaging and Analysis of Semiconductor Packages

  • FE-SEM for Highest Demands in Sub-nanometer Imaging, Analytics and Sample Flexibility

    ZEISS GeminiSEM
    LSM 990

    Combine excellence in imaging and analytics. Innovations in electron optics and a new chamber design let you benefit from better image quality, usability and flexibility. Take sub-nanometer images below 1 kV without an immersion lens. Discover three unique designs of the ZEISS Gemini electron optics.

    Explore GeminiSEM

    Choose GeminiSEM if you need:

    • High resolution construction analysis and benchmarking
    • Superior passive voltage contrast for fault isolation
    • Subsurface analysis
    • Electrical property measurement with nanoprobing
    Learn more

  • FIB-SEM with Femto-second Laser for Rapid Access to Buried Features and Optimum Sample Preparation

    ZEISS Crossbeam

    Combine imaging and analytical performance of a high-resolution FE-SEM with the processing ability of a next-generation Ga focused ion beam (FIB). Perform precise cross sections, TEM/APT sample preparation, tomography, imaging, and analytics. Correlate with 3D X-ray imaging and reveal buried structures using fs-laser with minimal heat affected zone.

    Explore Crossbeam

    Choose Crossbeam if you need:

    • High resolution, contrast and signal-to-noise ratio, even for low-voltage imaging
    • Prepare delicate samples for TEM and APT analysis
    • Perform accurate 3D imaging and analytics at the nanoscale
    • Access to buried features and defects using a correlative workflow
    Learn more

  • X-ray Microscope for sub-micron Nondestructive 3D Imaging

    ZEISS VersaXRM

    Capture volumetric 3D morphology and microstructure of intact semiconductor packages. Identify buried defects during process technology development and failure analysis. Seamlessly correlate 3D data with SEM and FIB-SEM for site-specific sample preparation.

    Explore VersaXRM

    Choose VersaXRM if you need:

    • AI enabled fast high-resolution 3D scans of IC packages and internal defects
    • Operational efficiency through built-in onscreen guidance, sample intelligence and streamlined workflow
    • Faster time-to-result using large field of view (FOV)
    Learn more

  • X-ray MicroCT for Advanced Imaging of Embedded Structures and Defects

    ZEISS Xradia Context

    Analyze entire packages and modules using an easy-to-use microCT. A high-array detector enables high resolution of fine details even with relatively large imaging volumes. The system features a large field of view, rapid sample mounting and alignment, streamlined acquisition workflow and fast exposure and data reconstruction times.

    Explore Xradia Context

    Product features

    • 3D nondestructive imaging on entire electronic component
    • Micro-scale failure analysis without cross-sectioning the sample
    • Seamless connection to ZEISS correlative microscopy environment
    Learn more
Learn more about Semiconductor Applications

Semiconductor Lab Essentials

  • Stereo Microscope for Sample Preparation, Surveying and Imaging

    ZEISS Discovery.V8
    Buy or Try the Discovery.V8

    Produce crisp, three-dimensional, distortion-free, colored images. Perfect for digital archiving, sample preparation, basic inspection, or failure analysis

    Trial, get a Quote or Purchase here
Discover more lab essentials

Complete your lab

with our new solution bundles

Streamline sample preparation for your logic and memory devices​

Configure your Stemi 508

Microscopy FAQs for Semiconductors​

ZEISS offers a variety of microscopy techniques tailored for Semiconductors including:

  • ZEISS microscopes, especially the Crossbeam FIB-SEMs, enhance the yield and success of Transmission Electron Microscopy (TEM) lamellae preparation for semiconductor failure analysis through several key features:​

    High-Resolution Imaging: Essential for Identifying Target Areas and Assessing Sample Quality.​

    FIB (Focused Ion Beam) Milling: Ga+ focused ion beam – scanning electron microscope (FIB-SEM) for preparing TEM samples with minimal artifacts through simultaneous Imaging while milling and precise end-pointing.​

    Integrated Analytics: Provides additional insights, such as EDS Elemental Analysis, and Real-Time Feedback during milling to allow quick adjustments and quality enhancement of the lamella.​

    Automation: Supports semi-automated and automated TEM lamellae prep workflows, optimizing efficiency, yield and success rates. ​

    Explore ZEISS Crossbeam FIB-SEMs

  • Electron microscope-based techniques like Passive Voltage Contrast (PVC) and Nanoprobing are crucial for defect localization and electrical fault isolation in semiconductor devices.​

    Passive Voltage Contrast (PVC): Uses SEM to visualize electrical potential differences within semiconductor nanostructures, aiding in defect and fault identification.​

    Nanoprobing: Utilizes sharp probes for precise electrical measurements on specific nanoscale features that can only be observed under an SEM. Key nanoprobing modes include:​

    Electron Beam Absorbed Current (EBAC): Measures current from electron absorption, revealing local electrical properties and tracing carrier path.​

    Electron Beam Induced Current (EBIC): Detects current from electron beam interaction, mapping p-n junctions and electrically active defects.​

    Electron Beam Induced Resistance Change (EBIRCH): Identifies resistive defects like shorts.​

    Zeiss GeminiSEM field-emission SEMs allow for seamless integration of imaging and nanoprobing, enabling real-time observation of the electrical characteristics of the device while simultaneously visualizing its structure.​

    Explore ZEISS GeminiSEM FE-SEM​

    To learn more about electrical defect localization inside an SEM and Passive Voltage Contrast, please listen to our recent webinar.

  • Nanoscale tomography provides high-resolution, three-dimensional imaging of semiconductor structures, allowing for detailed visualization of internal features and defects. This technique enables precise identification and localization of faults, such as voids, inclusions, and interface irregularities, which are critical for understanding failure mechanisms and improving device reliability. ​

    By reconstructing the 3D architecture of semiconductor devices, nanoscale tomography in a focused ion beam scanning electron microscope (FIB-SEM) facilitates a comprehensive analysis of complex structures, aiding in the development and optimization of advanced semiconductor technologies. True z-depth monitoring with high nm-scale resolution, live imaging while milling, isotropic voxels and integrated analytics are few key features to obtain most accurate 3D reconstruction of the complex structure.

    Explore ZEISS Crossbeam FIB-SEMs